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FNK8310 - P-Channel Power MOSFET

General Description

The FNK8310 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Key Features

  • N-Channel VDS = 30V,ID =6.5A RDS(ON) < 32mΩ @ VGS=10V.
  • P-Channel VDS = -30V,ID = -7A RDS(ON) < 45mΩ @ VGS=-10V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package N-channel P-channel Schematic diagram Marking and pin assignment Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width 8310 FNK8310 DFN2x3-8L Ø330mm 12mm Absolute Maximum Ratings (TA=25℃unless otherwise note.

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Datasheet Details

Part number FNK8310
Manufacturer FNK
File Size 1.54 MB
Description P-Channel Power MOSFET
Datasheet download datasheet FNK8310 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N and P-Channel Enhancement Mode Power MOSFET Description The FNK8310 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. FNK8310 General Features ● N-Channel VDS = 30V,ID =6.