FNK55H11 datasheet, mosfet equivalent, FNK

Features and benefits

VDS =55V,ID =110A RDS(ON) < 6m @ VGS=10V (Typ:4.5m ) Schematic diagram High density cell design for ultra low Rdson Fully characterized avalanche voltage and current G.

Application

General Features VDS =55V,ID =110A RDS(ON) < 6m @ VGS=10V (Typ:4.5m ) Schematic diagram High density cell design fo.

Description

The FNK 55H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =55V,ID =110A RDS(ON) < 6m @ VGS=10V (Typ:4.5m ) Schematic diagram .

Image gallery