* VDS=100V; ID=100A@ VGS=10V; RDS(ON)<9.3mΩ @ VGS=10V
* Special Designed for E-Bike Controller Application
* Ultra Low On-Resistance
* High UIS and UIS 10.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applic.

The FNK01N08 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features
* VDS=.

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