* VDS =-55V,ID =-30A RDS(ON) <40mΩ @ VGS=-10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good st.

General Features
* VDS =-55V,ID =-30A RDS(ON) <40mΩ @ VGS=-10V
* High density cell design for ultra low Rdson .

The FNK55P30PD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =-55V,ID =-30A RDS(ON) <40mΩ @ VGS=-10V
* High density cell.

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