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FNK5530PD - P-Channel Power MOSFET

Description

The FNK55P30PD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =-55V,ID =-30A RDS(ON).

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Datasheet Details

Part number FNK5530PD
Manufacturer FNK
File Size 1.01 MB
Description P-Channel Power MOSFET
Datasheet download datasheet FNK5530PD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FNK5530PD FNK P-Channel Enhancement Mode Power MOSFET Description The FNK55P30PD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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