FNK5515PD datasheet, mosfet equivalent, FNK

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Features and benefits

* VDS =-55V,ID =-15A RDS(ON) <75mΩ @ VGS=-10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Excelle.

Application

General Features
* VDS =-55V,ID =-15A RDS(ON) <75mΩ @ VGS=-10V
* High density cell design for ultra low Rdson .

Description

The FNK55P15PD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =-55V,ID =-15A RDS(ON) <75mΩ @ VGS=-10V
* High density cell.

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