FNK5410D mosfet equivalent, n-channel power mosfet.
* VDS = 100V,ID = 12A RDS(ON) <138mΩ @ VGS=10V (Typ:121mΩ) RDS(ON) <152mΩ @ VGS=4.5V (Typ:132mΩ)
* High density cell design for ultra low Rdson
* Fully charac.
General Features
* VDS = 100V,ID = 12A RDS(ON) <138mΩ @ VGS=10V (Typ:121mΩ) RDS(ON) <152mΩ @ VGS=4.5V (Typ:132mΩ)
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The FNK5410D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS = 100V,ID = 12A RDS(ON) <138mΩ @ VGS=10V (Typ:121mΩ) RDS(ON) <152.
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