FNK3710 datasheet, mosfet equivalent, FNK

Features and benefits

* VDS = 100V,ID =100A RDS(ON) < 18mΩ @ VGS=10V (Typ:14mΩ)
* Special process technology for high ESD capability
* High density cell design for ultra low Rdso.

Application

General Features
* VDS = 100V,ID =100A RDS(ON) < 18mΩ @ VGS=10V (Typ:14mΩ)
* Special process technology for .

Description

The FNK3710 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS = 100V,ID =100A RDS(ON) < 18mΩ @ VGS=10V (Typ:14mΩ)
* Specia.

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