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FNK3070PD - P-Channel Power MOSFET

Download the FNK3070PD datasheet PDF. This datasheet also covers the FNK3070PC variant, as both devices belong to the same p-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The FNK3070PC/D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

can be used in a wide variety of applications.

Features

  • VDS=-30V, ID=-70A R DS(ON) < 8.3 mΩ @ VGS=-10V Schematic diagram.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FNK3070PC-FNK.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number FNK3070PD
Manufacturer FNK
File Size 1.08 MB
Description P-Channel Power MOSFET
Datasheet download datasheet FNK3070PD Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FNK P-Channel Enhancement Mode Power MOSFET FNK3070PC/D Description The FNK3070PC/D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS=-30V, ID=-70A R DS(ON) < 8.
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