FNK3070PD mosfet equivalent, p-channel power mosfet.
* VDS=-30V, ID=-70A
R DS(ON) < 8.3 mΩ @ VGS=-10V
Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage an.
General Features
* VDS=-30V, ID=-70A
R DS(ON) < 8.3 mΩ @ VGS=-10V
Schematic diagram
* High density cell desi.
The FNK3070PC/D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
* VDS=-30V, ID=-70A
R DS(ON) < 8.3 mΩ @ VGS=-10V
Schematic diagram
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