* VDS =-30V, ID=-35A R DS(ON) < 10 mΩ @ VGS=-10V D G S Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche volt.

General Features
* VDS =-30V, ID=-35A R DS(ON) < 10 mΩ @ VGS=-10V D G S Schematic diagram
* High density cell.

TheFNK3035P uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =-30V, ID=-35A R DS(ON) < 10 mΩ @ VGS=-10V D G S Schematic diagram.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts