FNK3075PD datasheet, mosfet equivalent, FNK

Features and benefits

* VDS =-30V,I =-75A R DS(ON) < 6.9mΩ @ VGS=-10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good .

Application

General Features
* VDS =-30V,I =-75A R DS(ON) < 6.9mΩ @ VGS=-10V
* High density cell design for ultra low Rdso.

Description

The FNK3075PC/D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =-30V,I =-75A R DS(ON) < 6.9mΩ @ VGS=-10V
* High density c.

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