FNK3085 mosfet equivalent, p-channel power mosfet.
* VDS =-30V,ID =-85A R DS(ON) < 10.2mΩ @ VGS=-10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Goo.
General Features
* VDS =-30V,ID =-85A R DS(ON) < 10.2mΩ @ VGS=-10V
* High density cell design for ultra low Rds.
TheFNK3085 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =-30V,ID =-85A R DS(ON) < 10.2mΩ @ VGS=-10V
* High density cell .
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