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FNK3607 - N-Channel Power MOSFET

Description

The FNK3607 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =80V,ID =110A RDS(ON) < 9.0mΩ @ VGS=10V (Typ:7.1mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability Schematic diagram.

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Datasheet Details

Part number FNK3607
Manufacturer FNK
File Size 1.14 MB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK3607 Datasheet

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Full PDF Text Transcription

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FNK3607 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK3607 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =80V,ID =110A RDS(ON) < 9.0mΩ @ VGS=10V (Typ:7.
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