FNK12N12T datasheet, mosfet equivalent, FNK

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Features and benefits

* VDS =120V,ID =120A RDS(ON) < 7.2mΩ @ VGS=10V (Typ:5.8mΩ) Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche.

Application

FNK12N12T General Features
* VDS =120V,ID =120A RDS(ON) < 7.2mΩ @ VGS=10V (Typ:5.8mΩ) Schematic diagram
* .

Description

TheFNK12N12T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FNK12N12T General Features
* VDS =120V,ID =120A RDS(ON) < 7.2mΩ @ VGS=10V (Typ:5.8mΩ) .

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