FNK10N01-A datasheet, mosfet equivalent, FNK

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Features and benefits

* VDS =25V,ID =150A RDS(ON) <2.05 mΩ @ VGS=10V RDS(ON) <3.05m Ω @ VGS=4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche volt.

Application

General Features
* VDS =25V,ID =150A RDS(ON) <2.05 mΩ @ VGS=10V RDS(ON) <3.05m Ω @ VGS=4.5V
* High density cel.

Description

The FNK10N01-A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =25V,ID =150A RDS(ON) <2.05 mΩ @ VGS=10V RDS(ON) <3.05m Ω @ VGS.

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