FNK10N02 datasheet, mosfet equivalent, FNK

Features and benefits

* VDS =20V,ID =180A RDS(ON) <2.25mΩ @ VGS=4.5V (Typ2.07mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and curren.

Application

General Features
* VDS =20V,ID =180A RDS(ON) <2.25mΩ @ VGS=4.5V (Typ2.07mΩ)
* High density cell design for u.

Description

The FNK10N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =20V,ID =180A RDS(ON) <2.25mΩ @ VGS=4.5V (Typ2.07mΩ)
* High.

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