* VDS =20V,ID =100A RDS(ON) <2.05mΩ @ VGS=4.5V (Typ1.8mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current.

General Features
* VDS =20V,ID =100A RDS(ON) <2.05mΩ @ VGS=4.5V (Typ1.8mΩ)
* High density cell design for ul.

The FNK10N01 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =20V,ID =100A RDS(ON) <2.05mΩ @ VGS=4.5V (Typ1.8mΩ)
* High .

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