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FNK10N01 - N-Channel Enhancement Mode Power MOSFET

Description

The FNK10N01 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =20V,ID =100A RDS(ON).

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Datasheet Details

Part number FNK10N01
Manufacturer FNK
File Size 1.51 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet FNK10N01 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FNK10N01 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK10N01 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =100A RDS(ON) <2.05mΩ @ VGS=4.5V (Typ1.
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