* VDS =120V,ID =120A RDS(ON) < 7.2mΩ @ VGS=10V (Typ:5.8mΩ) Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche.

FNK12N12D General Features
* VDS =120V,ID =120A RDS(ON) < 7.2mΩ @ VGS=10V (Typ:5.8mΩ) Schematic diagram
* .

TheFNK12N12D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FNK12N12D General Features
* VDS =120V,ID =120A RDS(ON) < 7.2mΩ @ VGS=10V (Typ:5.8mΩ) .

FNK12N12

FNK12N12T

FNK10N01

FNK10N01-A

FNK10N02

FNK10N02-A

FNK10N02C

FNK10N03

FNK10N25A

FNK10N25B

FNK10N25E

FNK10N25S

FNK10N25SC

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts