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DMN2015UFDE - 20V N-CHANNEL ENHANCEMENT MODE MOSFET

Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Case: U-DFN2020-6 Type E Ca

Features

  • 0.6mm profile.
  • ideal for low profile.

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DMN2015UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION V(BR)DSS RDS(ON) max 11.6mΩ @ VGS = 4.5V 20V 15mΩ @ VGS = 2.5V Package U-DFN2020-6 Type E ID max TA = +25°C 10.5A 9.4A Features • • • • • • • 0.6mm profile – ideal for low profile applications PCB footprint of 4mm Low On-Resistance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability 2 Low Gate Threshold Voltage Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.