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PE58120G Datasheet, ChipSourceTek

PE58120G mosfet equivalent, n-channel enhancement mode power mosfet.

PE58120G Avg. rating / M : 1.0 rating-12

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PE58120G Datasheet

Features and benefits


* VDS = 85V, ID = 90A RDS(ON) < 6mΩ @ VGS=10V RDS(ON) < 6.5mΩ @ VGS=8V Schematic diagram
* High Power and current handing capability
* Lead free product is.

Application

General Features
* VDS = 85V, ID = 90A RDS(ON) < 6mΩ @ VGS=10V RDS(ON) < 6.5mΩ @ VGS=8V Schematic diagram
* .

Description

The PE58120G uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features
* VDS = 85V, ID = 90A RDS(ON) < 6mΩ @ VGS=10V RDS(ON) < 6.5mΩ @ VGS=8V Schematic diagr.

Image gallery

PE58120G Page 1 PE58120G Page 2 PE58120G Page 3

TAGS

PE58120G
N-Channel
Enhancement
Mode
Power
MOSFET
PE58120P
PE500C-10F
PE500C-10UV
ChipSourceTek

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