PE58120G mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 85V, ID = 90A
RDS(ON) < 6mΩ @ VGS=10V RDS(ON) < 6.5mΩ @ VGS=8V
Schematic diagram
* High Power and current handing capability
* Lead free product is.
General Features
* VDS = 85V, ID = 90A
RDS(ON) < 6mΩ @ VGS=10V RDS(ON) < 6.5mΩ @ VGS=8V
Schematic diagram
* .
The PE58120G uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
General Features
* VDS = 85V, ID = 90A
RDS(ON) < 6mΩ @ VGS=10V RDS(ON) < 6.5mΩ @ VGS=8V
Schematic diagr.
Image gallery
TAGS
Download