PE58120P mosfet equivalent, n-channel power mosfet.
* VDS = 85V, ID = 120 A
RDS(ON) < 5.4mΩ @ VGS=10V
Schematic diagram
* High Power and current handing capability
* Lead free product is acquired
* Surfac.
General Features
* VDS = 85V, ID = 120 A
RDS(ON) < 5.4mΩ @ VGS=10V
Schematic diagram
* High Power and curren.
The PE58120P uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
General Features
* VDS = 85V, ID = 120 A
RDS(ON) < 5.4mΩ @ VGS=10V
Schematic diagram
* High Power .
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