PE58120P datasheet, mosfet equivalent, ChipSourceTek

Features and benefits

* VDS = 85V, ID = 120 A RDS(ON) < 5.4mΩ @ VGS=10V Schematic diagram
* High Power and current handing capability
* Lead free product is acquired
* Surfac.

Application

General Features
* VDS = 85V, ID = 120 A RDS(ON) < 5.4mΩ @ VGS=10V Schematic diagram
* High Power and curren.

Description

The PE58120P uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features
* VDS = 85V, ID = 120 A RDS(ON) < 5.4mΩ @ VGS=10V Schematic diagram
* High Power .

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