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PE504BA - MOSFET

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Part number PE504BA
Manufacturer UNIKC
File Size 448.99 KB
Description MOSFET
Datasheet download datasheet PE504BA Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PE504BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 10mΩ @VGS = 10V ID 31A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 Avalanche Current Tc = 25 °C Tc = 100 °C TA = 25 °C TA= 70 °C ID IDM IAS 31 20 12 9 70 26 Avalanche Energy EAS 33 TC = 25 °C Power Dissipation TC = 100 °C TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range PD TJ, Tstg 17 7 2.3 1.5 -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RqJC 7.5 Junction-to-Ambient2 RqJA 55 1Pulse width limited by maximum junction temperature.
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