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PE506BA Datasheet Preview

PE506BA Datasheet

N-Channel Enhancement Mode MOSFET

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PE506BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 6mΩ @VGS = 10V
ID
38A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current3
Pulsed Drain Current1
Avalanche Current
Tc = 25 °C
Tc = 100 °C
TA = 25 °C
TA= 70 °C
ID
IDM
IAS
38
24
12
9.8
60
32
Avalanche Energy
L =0.1mH
EAS
53
TC = 25 °C
Power Dissipation
TC = 100 °C
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
PD
TJ, Tstg
15.6
6.3
1.6
1
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
77
Junction-to-Case
RqJC
8
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 19A.
UNITS
°C / W
REV 1.0
1 2014-3-3




UNIKC

PE506BA Datasheet Preview

PE506BA Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

PE506BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ =125 °C
VGS = 4.5V, ID = 12A
VGS = 10V , ID = 12A
VDS = 5V, ID = 12A
30
1
1.6 3
V
±100 nA
1
mA
10
6.2 9
5.4 6
80 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V, VDS = 15V, f = 1MHz
1818
263
218
pF
Total Gate Charge2
Gate-Source Charge2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
VDS = 15V , ID = 12A
43.8
23.1
5.5
Gate-Drain Charge2
Qgd
12.7
Turn-On Delay Time2
td(on)
25
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD= 15V,
ID @ 12A, VGS = 10V, RGEN= 6Ω
24
99
Fall Time2
tf
57
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 12A, VGS = 0V
Reverse Recovery Time
trr IF = 12A, dlF/dt = 100A / μS
Reverse Recovery Charge
Qrr
VGS = 0V
22
12
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is 19A.
13
1.2
nC
nS
A
V
nS
nC
REV 1.0
2 2014-3-3


Part Number PE506BA
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
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