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PE507BA Datasheet Preview

PE507BA Datasheet

P-Channel Enhancement Mode MOSFET

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PE507BA
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
14mΩ @VGS = -10V
ID
-28A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±25
Tc = 25 °C
-28
Continuous Drain Current3
Tc = 100 °C
TA = 25 °C
ID
-18
-10
Pulsed Drain Current1
TA= 70 °C
IDM
-8
-50
Avalanche Current
IAS -42
Avalanche Energy
L =0.1mH
EAS
87
TC = 25 °C
16
Power Dissipation
TC = 100 °C
TA = 25 °C
PD
6
2
TA = 70 °C
1.3
Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
60
Junction-to-Case
RqJC
7.5
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 22A.
UNITS
°C / W
REV 1.1
1 2015/3/24




UNIKC

PE507BA Datasheet Preview

PE507BA Datasheet

P-Channel Enhancement Mode MOSFET

No Preview Available !

PE507BA
P-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = -250mA
-30
V
VDS = VGS, ID = -250mA
-1 -1.5 -3
VDS = 0V, VGS = ±25V
±100 nA
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V, TJ = 55 °C
-1
mA
-10
VGS = -4.5V, ID =-9A
VGS = -10V , ID = -10A
14.5 22
9.6 14
VDS = -10V, ID = -10A
32 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = -15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
2100
365
327
3
pF
Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = -15V , VGS = -10V,
ID = -10A
VDD= -15V,
ID @ -10A, VGS = -10V, RGEN= 6Ω
49.1
6
12.3
24
24
85
50
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = -10A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -10A, dl/dt = 100A / μS
20.5
8.3
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
-23
-1.2
A
V
nS
mC
REV 1.1
2 2015/3/24


Part Number PE507BA
Description P-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
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