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BTC2881L3 - General Purpose NPN Epitaxial Planar Transistor

Key Features

  • High breakdown voltage, BVCEO≥ 200V.
  • Large continuous collector current capability.
  • Low collector saturation voltage.
  • Pb-free lead plating and halogen-free package Symbol BTC2881L3 Outline SOT-223 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Operating Junction and Storag.

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Datasheet Details

Part number BTC2881L3
Manufacturer CYStech
File Size 236.12 KB
Description General Purpose NPN Epitaxial Planar Transistor
Datasheet download datasheet BTC2881L3 Datasheet

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Full PDF Text Transcription (Reference)

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CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTC2881L3 BVCEO IC RCESAT(MAX) Spec. No. : C316L3 Issued Date : 2010.12.29 Revised Date : 2011.01.03 Page No. : 1/7 200V 1A 0.86Ω Features • High breakdown voltage, BVCEO≥ 200V • Large continuous collector current capability • Low collector saturation voltage • Pb-free lead plating and halogen-free package Symbol BTC2881L3 Outline SOT-223 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Operating Junction and Storage Temperature Range Symbol VCBO VCEO VEBO IC IB PD Tj ; Tstg Limits 300 200 6 1 0.