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BTC2881M3 - General Purpose NPN Epitaxial Planar Transistor

Features

  • High breakdown voltage, BVCEO≥ 200V.
  • Large continuous collector current capability.
  • Low collector saturation voltage.
  • Complementary to BTA1201M3.
  • Pb-free lead plating and halogen-free package Symbol BTC2881M3 Outline SOT-89 B：Base C：Collector E：Emitter BCE Ordering Information Device BTC2881M3-X-T2-G Package SOT-89 (Pb-free lead plating and halogen-free package) Shipping 1000 pcs / Tape & Reel Environment friendly grade : S for RoHS complia.

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Datasheet Details

Part number BTC2881M3
Manufacturer CYStech
File Size 272.06 KB
Description General Purpose NPN Epitaxial Planar Transistor
Datasheet download datasheet BTC2881M3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTC2881M3 BVCEO IC RCESAT(MAX) Spec. No. : C316M3 Issued Date : 2007.03.28 Revised Date : 2017.11.10 Page No. : 1/7 200V 1A 0.
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