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BTC2880A3 - General Purpose NPN Epitaxial Planar Transistor

Description

The BTC2880A3 is designed for general purpose medium power amplifier and switching applications.

Features

  • Low collector saturation voltage.
  • High breakdown voltage, VCEO=100V (min. ).
  • High collector current, IC(max)=1A (DC).
  • Pb-free package Symbol BTC2880A3 Outline TO-92 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature S.

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Datasheet Details

Part number BTC2880A3
Manufacturer CYStech
File Size 144.51 KB
Description General Purpose NPN Epitaxial Planar Transistor
Datasheet download datasheet BTC2880A3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTC2880A3 Spec. No. : C319A3 Issued Date : 2007.05.04 Revised Date : Page No. : 1/7 Description The BTC2880A3 is designed for general purpose medium power amplifier and switching applications. Features • Low collector saturation voltage • High breakdown voltage, VCEO=100V (min.
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