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BTC2881E3 - Silicon NPN Epitaxial Planar Transistor

Description

High breakdown voltage, BVCEO≥ 200V Large continuous collector current capability Low collector saturation voltage RoHS compliant package Symbol BTC2881E3 Outline TO-220 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collec

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Datasheet Details

Part number BTC2881E3
Manufacturer CYStech
File Size 190.93 KB
Description Silicon NPN Epitaxial Planar Transistor
Datasheet download datasheet BTC2881E3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTC2881E3 BVCEO IC RCESAT(MAX) Spec. No. : C316E3 Issued Date : 2010.01.22 Revised Date : 2010.09.28 Page No. : 1/5 200V 1A 0.86Ω Description • High breakdown voltage, BVCEO≥ 200V • Large continuous collector current capability • Low collector saturation voltage • RoHS compliant package Symbol BTC2881E3 Outline TO-220 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Operating Junction Temperature and Storage Temperature Range Symbol VCBO VCEO VEBO IC IB PD Tj ; Tstg Limits 300 200 6 1 0.
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