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BTC2881J3 - General Purpose NPN Epitaxial Planar Transistor

Features

  • High breakdown voltage, BVCEO≥ 200V.
  • Large continuous collector current capability.
  • Low collector saturation voltage.
  • Pb-free lead plating and halogen-free package Symbol BTC2881J3 Outline TO-252(DPAK) B：Base C：Collector E：Emitter B CE Ordering Information Device BTC2881J3-0-T3-G Package TO-252 (RoHS compliant package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing.

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Datasheet Details

Part number BTC2881J3
Manufacturer CYStech
File Size 349.38 KB
Description General Purpose NPN Epitaxial Planar Transistor
Datasheet download datasheet BTC2881J3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTC2881J3 BVCEO IC Spec. No. : C316J3 Issued Date : 2009.11.17 Revised Date : 2018.08.30 Page No.
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