z VDS =600 V z ID =12A z RDS(ON) =0.5 Ω TYP(VGS=10V,ID=6.0A) z Low CRSS (typical 17pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Volta.

These N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high ener.

BF912N60

BF9100BSNL

BF910N60

BF910N60L

BF91404

BF900

BF901

BF901R

BF9024SPD-M

BF9028DND-A

BF9028DND-GE

BF9028DNT

BF90315SNS

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