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BF91404 - N-Channel MOSFET

Description

This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge.

It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications.

Features

  • z VDS =40V z ID =100A z Typical RDS(ON) =2.5m Ω (VGS=10V,ID=50A) z Fast switching z 100% avalanche tested z Improved dv/dt capability Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage Drain Current(continuous)at Tc=25℃ ID Drain Current(continuous)at Tc=100℃ IDM Drain Current (package limited) （Note1） VGS Gate-Source Voltage EAS Single Pulse Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy PD Power Dissipation (TC = 25°C) Power Dissipation (TC =1.

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Datasheet Details

Part number BF91404
Manufacturer BYD
File Size 238.88 KB
Description N-Channel MOSFET
Datasheet download datasheet BF91404 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BYD Microelectronics Co., Ltd. BF91404 40V N-Channel MOSFET General Description This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. Features z VDS =40V z ID =100A z Typical RDS(ON) =2.
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