Datasheet Details
| Part number | BF9100BSNL |
|---|---|
| Manufacturer | BYD |
| File Size | 235.54 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 BF9100BSNL Datasheet
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Description
This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge.
It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications.
Features
- z VDS =100 V z ID =100A z Typical RDS(ON) =8m Ω (VGS=10V,ID=50A) z Fast switching z 100% avalanche tested z Improved dv/dt capability Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25℃ IDM Drain Current (pulsed) VGS Gate-Source Voltage EAS Single Pulse Avalanche Energy IAR Avalanche Current PD Power Dissipation (TC = 25°C) TJ,Tstg TL Operating junction and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose （N.