Datasheet4U Logo Datasheet4U.com

BF912N60 - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • z VDS =600 V z ID =12A z RDS(ON) =0.5 Ω TYP(VGS=10V,ID=6.0A) z Low CRSS (typical 17pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25°C IDM Drain Current (pulsed) (Note1) VGS Gate-Source Voltage EAS Single PulseAvalancheEnergy (Note2) IAR Avalanche Current (Note1) EAR RepetitiveAvalancheEnergy (Note1) dv/dt PeakDiodeRecoverydv/dt (Note.

📥 Download Datasheet

Datasheet Details

Part number BF912N60
Manufacturer BYD
File Size 255.92 KB
Description N-Channel MOSFET
Datasheet download datasheet BF912N60 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BF900 Sicherungshalter Inter Control
BF900 n-channel dual gate MOSFET Siliconix
BF901 Silicon n-channel dual gate MOS-FETs NXP
BF901R Silicon n-channel dual gate MOS-FETs NXP
BF904 N-channel dual gate MOS-FETs NXP

Other Datasheets by BYD

Part Number Description
BF912N60L N-Channel MOSFET
BF9100BSNL N-Channel MOSFET
BF910N60 N-Channel MOSFET
BF910N60L N-Channel MOSFET
BF91404 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BYD Microelectronics Co., Ltd. BF912N60/ BF912N60L 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features z VDS =600 V z ID =12A z RDS(ON) =0.5 Ω TYP(VGS=10V,ID=6.
Published: |