Datasheet Details
| Part number | BLS9G2729LS-350 |
|---|---|
| Manufacturer | Ampleon |
| File Size | 498.17 KB |
| Description | LDMOS S-band radar power transistor |
| Datasheet |
 BLS9G2729LS-350 Datasheet
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General Description
350 W LDMOS power transistor for S-band applications in the frequency range from 2.7 GHz to 2.9 GHz.
Table 1.
Test information Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 400 mA; in a class-AB demo circuit.
Key Features
- High efficiency.
- Excellent ruggedness.
- Designed for S-band operations.
- Excellent thermal stability.
- Easy power control.
- Integrated dual sided ESD protection enables excellent off-state isolation.
- High flexibility with respect to pulse formats.
- Internally matched for ease of use.
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.