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BLS9G2729LS-350 Datasheet, Ampleon

BLS9G2729LS-350 transistor equivalent, ldmos s-band radar power transistor.

BLS9G2729LS-350 Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 498.17KB)

BLS9G2729LS-350 Datasheet
BLS9G2729LS-350 Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 498.17KB)

BLS9G2729LS-350 Datasheet

Features and benefits


* High efficiency
* Excellent ruggedness
* Designed for S-band operations
* Excellent thermal stability
* Easy power control
* Integrated dual sid.

Application

in the frequency range from 2.7 GHz to 2.9 GHz. Table 1. Test information Typical RF performance at Tcase = 25 C; tp =.

Description

350 W LDMOS power transistor for S-band applications in the frequency range from 2.7 GHz to 2.9 GHz. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo circuit. Test signal f .

Image gallery

BLS9G2729LS-350 Page 1 BLS9G2729LS-350 Page 2 BLS9G2729LS-350 Page 3

TAGS

BLS9G2729LS-350
LDMOS
S-band
radar
power
transistor
Ampleon

Manufacturer


Ampleon

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