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BLS9G2735L-50 - LDMOS S-band radar power transistor

Description

Single ended 50 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB demo test circuit.

Features

  • Single ended.
  • Small size.
  • High efficiency.
  • Excellent ruggedness.
  • Designed for S-band operation.
  • Excellent thermal stability.
  • Easy power control.
  • Integrated dual sided ESD protection enables excellent off-state isolation.
  • High flexibility with respect to pulse formats.
  • Internally matched for ease of use.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Datasheet Details

Part number BLS9G2735L-50
Manufacturer Ampleon
File Size 399.80 KB
Description LDMOS S-band radar power transistor
Datasheet download datasheet BLS9G2735L-50 Datasheet

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Full PDF Text Transcription

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BLS9G2735L-50; BLS9G2735LS-50 LDMOS S-band radar power transistor Rev. 1 — 6 October 2017 Product data sheet 1. Product profile 1.1 General description Single ended 50 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB demo test circuit. Test signal f VDS PL(1dB) Gp D (GHz) (V) (W) (dB) (%) pulsed RF 2.7 to 3.5 32 45 12 48 1.
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