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BLS9G2731L-400 - LDMOS S-band radar power transistor

Description

400 W LDMOS power transistor for S-band applications in the frequency range from 2700 MHz to 3100 MHz.

Table 1.

Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo circuit measured over the entire 2700 MHz to 3100 MHz frequency range.

Features

  • High efficiency.
  • Excellent ruggedness.
  • Designed for S-band radar.

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Datasheet Details

Part number BLS9G2731L-400
Manufacturer Ampleon
File Size 471.46 KB
Description LDMOS S-band radar power transistor
Datasheet download datasheet BLS9G2731L-400 Datasheet

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Full PDF Text Transcription

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BLS9G2731L-400; BLS9G2731LS-400 LDMOS S-band radar power transistor Rev. 1 — 13 April 2017 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor for S-band applications in the frequency range from 2700 MHz to 3100 MHz. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo circuit measured over the entire 2700 MHz to 3100 MHz frequency range. Test signal f VDS PL Gp D (MHz) (V) (W) (dB) (%) pulsed RF 2700 to 3100 32 425 13 47 1.
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