Datasheet4U Logo Datasheet4U.com

BLS9G2934L-400 - LDMOS S-band radar power transistor

Description

Single ended 400 W LDMOS power transistor for S-band radar applications in the frequency range from 2.9 GHz to 3.4 GHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo test circuit.

Features

  • Single ended.
  • Small size.
  • High efficiency.
  • Excellent ruggedness.
  • Designed for S-band operation.
  • Excellent thermal stability.
  • Easy power control.
  • Integrated dual sided ESD protection enables excellent off-state isolation.
  • High flexibility with respect to pulse formats.
  • Internally matched for ease of use.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

📥 Download Datasheet

Datasheet Details

Part number BLS9G2934L-400
Manufacturer Ampleon
File Size 613.13 KB
Description LDMOS S-band radar power transistor
Datasheet download datasheet BLS9G2934L-400 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BLS2731-10 Microwave power transistor NXP
BLS2731-110 Microwave power transistor NXP
BLS2731-20 Microwave power transistor NXP
BLS2731-50 Microwave power transistor NXP
BLS2933-100 Microwave power LDMOS transistor NXP

Other Datasheets by Ampleon

Part Number Description
BLS9G2934LS-400 LDMOS S-band radar power transistor
BLS9G2729L-350 LDMOS S-band radar power transistor
BLS9G2729LS-350 LDMOS S-band radar power transistor
BLS9G2731L-400 LDMOS S-band radar power transistor
BLS9G2731LS-400 LDMOS S-band radar power transistor

Full PDF Text Transcription

Click to expand full text
BLS9G2934L-400; BLS9G2934LS-400 LDMOS S-band radar power transistor Rev. 1 — 6 April 2017 Product data sheet 1. Product profile 1.1 General description Single ended 400 W LDMOS power transistor for S-band radar applications in the frequency range from 2.9 GHz to 3.4 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo test circuit. Test signal f VDS PL(1dB) Gp D (GHz) (V) (W) (dB) (%) pulsed RF 2.9 to 3.4 32 400 12 43 1.
Published: |