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BLS9G3135L-400 - LDMOS S-band radar power transistor

Description

400 W LDMOS power transistor for S-band radar applications in the frequency range from 3.1 GHz to 3.5 GHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo circuit.

Features

  • High efficiency.
  • Excellent ruggedness.
  • Designed for S-band operation.
  • Excellent thermal stability.
  • Easy power control.
  • Integrated dual sided ESD protection enables excellent off-state isolation.
  • High flexibility with respect to pulse formats.
  • Internally matched for ease of use.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Datasheet Details

Part number BLS9G3135L-400
Manufacturer Ampleon
File Size 566.37 KB
Description LDMOS S-band radar power transistor
Datasheet download datasheet BLS9G3135L-400 Datasheet

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Full PDF Text Transcription

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BLS9G3135L-400; BLS9G3135LS-400 LDMOS S-band radar power transistor Rev. 1 — 6 April 2017 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor for S-band radar applications in the frequency range from 3.1 GHz to 3.5 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo circuit. Test signal f VDS PL Gp D (GHz) (V) (W) (dB) (%) pulsed RF 3.1 to 3.5 32 425 12 43 1.
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