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BLF6G27-10 - Power LDMOS transistor

General Description

10 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz.

Table 1.

Typical performance RF performance at Tcase = 25 C in a class-AB production test circuit.

Key Features

  • Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on.

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Datasheet Details

Part number BLF6G27-10
Manufacturer Ampleon
File Size 434.69 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF6G27-10 Datasheet

Full PDF Text Transcription for BLF6G27-10 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BLF6G27-10. For precise diagrams, and layout, please refer to the original PDF.

BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 5 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor f...

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Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR885k (MHz) (V) (W) (dB) (%) (dBc) 1-carrier N-CDMA[1] 2500 to 2700 28 2 19 20 49[2] IS-95 2300 to 2400 28 2 22.5 24.8 47[2] ACPR1980k (dBc) 64[2] 64[2] [1] Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MH