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BLF6G27-10 - WiMAX power LDMOS transistor

Description

10 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.

Table 1.

Typical performance RF performance at Tcase = 25 °C in a class-AB production test circuit.

Features

  • I Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and an IDq of 130 mA: I Qualified up to a maximum VDS operation of 32 V I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation I Internally matched for ease of use I Low gold plating thicknes.

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Datasheet Details

Part number BLF6G27-10
Manufacturer NXP Semiconductors
File Size 141.76 KB
Description WiMAX power LDMOS transistor
Datasheet download datasheet BLF6G27-10 Datasheet

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Full PDF Text Transcription

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BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 01 — 4 February 2009 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1] [1] [2] f (MHz) 2500 to 2700 VDS (V) 28 PL(AV) (W) 2 Gp (dB) 19 ηD (%) 20 ACPR885k (dBc) −49[2] ACPR1980k (dBc) −64[2] Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz. Measured within 30 kHz bandwidth. CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
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