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BLF6G27-135 - WiMAX power LDMOS transistor

Description

135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.

Features

  • I Typical 1-carrier N-CDMA performance (Single carrier IS-95 with pilot, paging, sync and 6 traffic channels [Walsh codes 8 to 13]. PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 2500 MHz and 2700 MHz, a supply voltage of 32 V and an IDq of 1200 mA: N Average output power = 20 W N Power gain = 16 dB N Drain efficiency = 22.5 % N ACPR885k =.
  • 52.0 dBc in 30 kHz bandwidth I Easy power control I Integrated ESD protection I Excellent ruggednes.

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Datasheet Details

Part number BLF6G27-135
Manufacturer NXP Semiconductors
File Size 123.08 KB
Description WiMAX power LDMOS transistor
Datasheet download datasheet BLF6G27-135 Datasheet

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Full PDF Text Transcription

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BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 — 26 May 2008 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1] [1] [2] f (MHz) 2500 to 2700 VDS PL(AV) (V) 32 (W) 20 PL(p) Gp (W) 200 16 ηD ACPR885k ACPR1980k (dBc) (dBc) −67[2] (dB) (%) 22.5 −52[2] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 to 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. Measured within 30 kHz bandwidth. 1.
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