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BLF6G27-75 - WiMAX power LDMOS transistor

Description

75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.

Table 1.

Typical performance RF performance at Tcase = 25 °C in a class-AB production test circuit.

Features

  • I Typical 1-carrier N-CDMA performance (Single carrier IS-95 with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 2500 MHz and 2700 MHz, a supply voltage of 28 V and an IDq of 600 mA: N Average output power = 9 W N Power gain = 17 dB N Drain efficiency = 23 % N ACPR885 =.
  • 50.0 dBc in 30 kHz bandwidth I Easy power control I Integrated ESD protection I Excellent ruggedness I Hi.

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Datasheet Details

Part number BLF6G27-75
Manufacturer NXP Semiconductors
File Size 312.45 KB
Description WiMAX power LDMOS transistor
Datasheet download datasheet BLF6G27-75 Datasheet

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Full PDF Text Transcription

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BLF6G27-75; BLF6G27LS-75 WiMAX power LDMOS transistor Rev. 01 — 22 October 2009 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1] [1] [2] f (MHz) 2500 to 2700 VDS (V) 28 PL(AV) (W) 9 PL(M) Gp (W) 75 (dB) 17 ηD 23 ACPR885k ACPR1980k (dBc) −60[2] −50[2] (%) (dBc) Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. Measured within 30 kHz bandwidth.
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