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BLF6G27L-50BN
Power LDMOS transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
50 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Table 1. Typical performance
RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS PL(AV) Gp
D
(MHz)
(mA) (V) (W)
(dB) (%)
2-carrier W-CDMA
2500 to 2700
430 28 3
16.5 14.5
ACPR (dBc) 47 [1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz
1.