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BLF578 - Power LDMOS transistor

General Description

A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.

Table 1.

Key Features

  • Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 %:.
  • Output power = 1200 W.
  • Power gain = 24 dB.
  • Efficiency = 71 %.
  • Easy power control.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (10 MHz to 500 MHz).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (R.

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Datasheet Details

Part number BLF578
Manufacturer Ampleon
File Size 405.81 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF578 Datasheet

Full PDF Text Transcription for BLF578 (Reference)

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BLF578 Power LDMOS transistor Rev. 4 — 1 December 2016 Product data sheet 1. Product profile 1.1 General description A 1200 W LDMOS power transistor for broadcast applica...

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eral description A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Table 1. Application information Mode of operation CW pulsed RF f (MHz) 108 225 VDS PL (V) (W) 50 1000 50 1200 Gp (dB) 26 24 D (%) 75 71 1.