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BLF189XRBS - Power LDMOS transistor

Download the BLF189XRBS datasheet PDF (BLF189XRB included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power ldmos transistor.

Description

A 1900 W extremely rugged LDMOS power transistor for industrial pulsed applications in the HF to 150 MHz band.

Table 1.

Features

  • Easy power control.
  • Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor.
  • Excellent ruggedness VSWR > 65 : 1.
  • High efficiency.
  • Excellent thermal stability.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Note: The manufacturer provides a single datasheet file (BLF189XRB-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BLF189XRBS
Manufacturer Ampleon
File Size 703.83 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF189XRBS Datasheet

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Full PDF Text Transcription

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BLF189XRB; BLF189XRBS Power LDMOS transistor Rev. 1 — 3 October 2017 Product data sheet 1. Product profile 1.1 General description A 1900 W extremely rugged LDMOS power transistor for industrial pulsed applications in the HF to 150 MHz band. Table 1. Application information Test signal f (MHz) pulsed RF 108 VDS PL (V) (W) 50 1900 Gp (dB) 26 D (%) 72.5 1.2 Features and benefits  Easy power control  Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor  Excellent ruggedness VSWR > 65 : 1  High efficiency  Excellent thermal stability  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.
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