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BLF189XRA; BLF189XRAS
Power LDMOS transistor
Rev. 1 — 6 November 2017
Product data sheet
1. Product profile
1.1 General description
A 1700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band.
Table 1. Application information
Test signal
f
(MHz)
pulsed RF
108
VDS
PL
(V) (W)
50 1700
Gp (dB) 26.2
D (%) 74
1.2 Features and benefits
Easy power control Integrated dual sided ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (HF to 500 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.
BLF189XRAS Datasheet
