* Easy power control
* Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor
* Excellent ruggedness VSWR > .

in the HF to 150 MHz band. Table 1. Application information Test signal f (MHz) pulsed RF 108 VDS PL (V) (W) 5.

A 1900 W extremely rugged LDMOS power transistor for industrial pulsed applications in the HF to 150 MHz band. Table 1. Application information Test signal f (MHz) pulsed RF 108 VDS PL (V) (W) 50 1900 Gp (dB) 26 D (%) 72.5 1.2 Features .

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