-30V/-6.5A,RDS(ON)=48mΩ@VGS=-10V -30V/-5.0A,RDS(ON)=72mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application LED Displa.

Pin Description ( SOP-8P ) AFP9435WS 30V P-Channel Enhancement Mode MOSFET Features -30V/-6.5A,RDS(ON)=48mΩ@VGS=-10V -.

AFP9435WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.

AFP9434WS

AFP9407W

AFP9505WS

AFP9510S

AFP9530S

AFP9532S

AFP9560S

AFP9565S

AFP9566W

AFP9569

AFP9575S

AFP9576

AFP9578WS

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts