-60V/-4.6A,RDS(ON)= 100mΩ@VGS= -10V -60V/-3.8A,RDS(ON)= 120mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Back.

Pin Description ( SOP-8P ) AFP9407W 60V P-Channel Enhancement Mode MOSFET Features -60V/-4.6A,RDS(ON)= 100mΩ@VGS= -10V.

AFP9407W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

AFP9407W

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