-30V/-8A,RDS(ON)=55mΩ@VGS=10V -30V/-6A,RDS(ON)=75mΩ@VGS=4.5V -30V/-4A,RDS(ON)=95mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resi.

Pin Description ( DFN3X3-8L ) Features -30V/-8A,RDS(ON)=55mΩ@VGS=10V -30V/-6A,RDS(ON)=75mΩ@VGS=4.5V -30V/-4A,RDS(ON)=9.

AFP7923WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other b.

AFP7949AS

AFP7001KAS

AFP7113WS

AFP7117WS

AFP7127S

AFP7129S

AFP7143S

AFP7317WS

AFP7401S

AFP7407S

AFP7415WS

AFP7433

AFP7443

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