* ID=-1.4A,RDS(ON)=750 mΩ@VGS=-10V
* ID=-1.0A,RDS(ON)=800 mΩ@VGS=-6V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistan.

Pin Description ( DFN3.3X3.3-8L ) AFP7117WS 150V P-Channel Enhancement Mode MOSFET Features
* ID=-1.4A,RDS(ON)=750.

AFP7117WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other b.

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